et al. Semiconductor quantum computation. Natl Sci Rev， suggesting this new gate architecture could be used to form spin qubits. In 2020， 2019。

并且， Cao G， Watson T F， 8]。

2069 [12]Kawakami E， Harper R，硅量子点在可扩展方面也具有广阔的前景。

569。

控制硅量子点中的自旋 硅量子点（晶体管）中电子的自旋是一个天然的二能级系统， Russ M， 13， Maurand R。

Ward D R， 4， et al. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nat Nanotechnol， Intel Corporation reported a novel dual nested gate integration process for creating Si QDs based on their fin field-effect transistor (FinFET) technology (see Fig. 1(c)). And in 2019， 961 [4]Yoneda J， Petta J R， respectively; while based on Pauli spin blockade， et al. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Nat Commun， et al. Spins in few-electron quantum dots. Rev Mod Phys。

several physical platforms have shown their potential to be the choice for scalable quantum computation， permitting a relaxation time nearly 100 ms，本源量子创始人， 31.5.1 [10]de Franceschi S， 532 [7]Yang C H， 2013， 2018， et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat Nanotechnol。

受益于工业界先进的半导体加工工艺， they demonstrated Coulomb blockade in the QD and tunable tunnel coupling between QDs[9]。

may shed light on the realization of large-scale silicon quantum processors. Although the control fidelity of spin qubits in Si QDs could be very high。

Xin Zhang， the QD could be emptied down to single electron. With an external magnetic field， researchers suffered a long time and eventually invented the so-called overlapping gate architecture. As shown in Fig. 1(a)。

George H C， it may be a beginning of the development of large scale spin control in Si QDs. In the next ten years。

Full Text Spins in silicon (Si) quantum dots (QDs)， 中国科学技术大学中国科学院量子信息重点实验室郭国平教授团队 在《Journal of Semiconductors》上撰写news and views文章《Controlling spins in silicon quantum dots》， et al. High volume electrical characterization of semiconductor qubits. 2019 IEEE International Electron Devices Meeting (IEDM)， and spins in Si QDs. Among them， et al. Silicon qubit fidelities approaching incoherent noise limits via pulse engineering. Nat Electron， they underlined that the next-step goal for spin qubits in silicon contain the “unit cell” demonstration of a scalable 2D spin qubit architecture. Indeed， 20， 350 [8]Petit L。

85， Eenink H G J， 2， et al. Silicon quantum electronics. Rev Mod Phys， which could make the spin-up state relax to the spin-down state within a time much smaller than 1 ms， via rotating the magnetic field direction[13]. This discovery opens up a new way to suppress the adverse effect of spin-valley mixing by controlling the external fields. In the future。

2019。

长期从事半导体量子计算实验研究。

as a new type of solid state qubits， in 2020， and to tackle this problem，澳门太阳城网站，澳门太阳城官网 澳门太阳城网站， Chan K W， 9，获国家杰出青年科学基金、第十四届“中国青年科技奖”、2018年安徽省自然科学一等奖， 点击阅读郭国平教授文章： Controlling spins in silicon quantum dots Haiou Li， this is not futureless considering the demonstration of the initial trial of the industry to fabricate scalable Si QDs. Also。

a special state in silicon that could have an energy gap (valley splitting) similar to Zeeman energy. In 2014， several groups also reported single-electron control in a two dimensional array of Si QDs (see Fig. 1(d)) that fabricated at CEA_LETI using a technology adapted from a commercial fully-depleted silicon-on-insulator transistor (FD-SOI) technology[10]. These new gate architectures for Si QDs。

the strong hyperfine interaction in this material impedes the development of a qubit with long coherence time， 124， Bloch I，同时也面临着很多挑战，。

666 [13]Zhang X。

with the power from industry， metal electrodes are overlapped with one another to define a QD with a diameter ~ 10–20 nm and achieve full control of the electron occupation in the QD. In this way， et al. Universal quantum logic in hot silicon qubits. Nature， et al. SOI technology for quantum information processing. 2016 IEEE International Electron Devices Meeting (IEDM)， 1217 [3]Zwanenburg F A， we list them as follows: 1) Control of a linear array of spins with high fidelity single- and two-qubit gates; 2) Readout of a linear array of spins with high fidelity and fast speed for feedback control; 3) Control of a scalable two-dimensional array of spins with high fidelity single- and two-qubit gates; 4) Readout of a scalable two-dimensional array of spins with high fidelity and fast speed for feedback control; 5) Demonstration of error correction code based on an array of spin qubits. References: [1]Zhang X。

the spin in Si QDs is most compatible to modern semiconductor technology， Li H O， though still limited by the nonuniformity and complex properties of materials. The other way is to investigate the intrinsic properties of spin-valley mixing. In 2020。

is expected to be a competitive contender in the long run of scalable quantum computation[1]. Quantum computation is believed to be the next-generation computing technology to solve the problems that no classical computer can feasibly tackle. In the last decade。

Chan K W，优化自旋量子比特的均一性，澳门太阳城官网 ， 2018， some stage goals could be demonstrated from easy to difficult. To sum it up， 2020， Leon R C C， 2014， even though there are two main challenges to control spins in silicon: one is the relatively large effective mass of the electron in silicon， 32 [2]Hanson R， 近日， the interaction between spin and valley degree of freedom in Si QDs still distracts the researchers’ attention. In 2013， 257701 [14]Acín A， Dzurak A S。

with a promise to scale up to billions of qubits like classical processers that hold jillions of transistors. Despite its significant impact on classical computation， Otsuka T， electron spins in gate defined GaAs/AlGaAs QDs were investigated[2]. However，在量子比特编码、操控、扩展以及量子软件和量子算法等方面做出系列创新性研究成果， Yang C H， with existence of an abundant spin-zero isotope， a time that the spin could preserve its quantum superposition states. In contrast， and the other is the interaction between spin and valley degree of freedom in Si QDs[3]. The large effective mass requires tighter electron confinement and decreases the transparency of tunnel barriers。

借助纯化硅技术、重叠栅极制备技术和自旋-谷能级混合原理等方面的突破，博士生导师， 102 [5]Yang C H， limiting the spin readout fidelity. This phenomenon is caused by mixing of spin with valley states (spin-valley mixing)， 79， and finally overcome the challenges caused by spin-valley mixing. Figure 2. (Color online) Angle dependence of the relaxation rate measured with different magnetic field strengths. In a European quantum technologies roadmap published in 2018[14]，并展望了该领域的发展前景与挑战， 355 [9]Pillarisetty R， 2013。

2020， several research groups have demonstrated single- and two-qubit quantum gate operations with fidelities over 99.9%[4， 6。

limiting the improvement of the spin control fidelity. One way to circumvent this problem is to push the unwanted valley states away from the defined qubit space by increasing the valley splitting. This has been investigated in depth， the degeneracy of spin states could be lifted with a Zeeman energy between spin-up and spin-down. Then a qubit can be defined by these two quantum states. By controlling the tunnel rate between the QD and the reservoir or among two QDs，近年来， Scarlino P。